Forming B1-xCx Semiconductor Layers by Chemical Vapor Deposition

Forming B1-xCx Semiconductor Devices By Chemical Vapor Deposition

Thermal Stability and Substitutional Carbon Incorporation far above Solid- Solubility in Si1-xCx and Si1-x-yGexCy Layers Grown by Chemical Vapor Deposition using Disilane

Abstract Growth conditions for epitaxy of Si1-x-yGexCx and Si1-xCx alloy layers on (100) silicon substrates by rapid thermal chemical vapor deposition (RTCVD) with disilane as the silicon source gas are described and the Si1-xCx conditions are compared to previously reported RTCVD growth conditions for epitaxy of Si1-xCx using silane as the source gas. The thermal stability of the layers at 850...

Determination of Optical Properties in Germanium Carbon Coatings Deposited by Plasma Enhanced Chemical Vapor Deposition

In this research, Germanium-carbon coatings were deposited on ZnS substrates by plasma enhanced chemical vapor deposition (PECVD) using GeH4 and CH4 precursors. Optical parameters of the Ge1-xCx coating such as refractive index, Absorption coefficient, extinction coefficient and band gap were measured by the Swanepoel method based on the transmittance spectrum. The results showed that the refra...

Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers

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Deposition and Characterizations of ZnO Thin Films on Al2O3 (0001) Sub- strates with III-Arsenide Intermediating Layers

ZnO thin films have been grown by radio-frequency magnetron sputtering on c-plane sapphire substrates with III-V (i.e., GaAs and InAs) intermediate layers. The intermediate layers were grown by molecular beam epitaxy. Structural and optical properties were studied by X-ray diffraction (XRD) and Raman scatterings. The growth orientations of the ZnO/III-V/c-sapphire heterostructures were determin...